DocumentCode
3302587
Title
An extension of McKelvey´s one-flux method to energy space
Author
McKinnon, W.R.
Author_Institution
Nat. Res. Council of Canada, Ottawa, Ont., Canada
fYear
2001
fDate
25-27 June 2001
Firstpage
71
Lastpage
72
Abstract
McKelvey et al. (1961) introduced the one-flux method, based on left-going and right-going fluxes of particles, as an alternative to the drift-diffusion method in describing semiconductor devices. To study the limitations of the one-flux method, I propose an extension of the method to account for the energy of the particles. This extension, based on Bringuier´s Fokker-Planck approach to the Boltzmann equation, reduces the Boltzmann equation from momentum space to energy space.
Keywords
Boltzmann equation; Fokker-Planck equation; semiconductor device models; Boltzmann equation; Fokker-Planck equation; energy space; one-flux method; semiconductor device model; Backscatter; Boltzmann equation; Councils; Electrons; Energy loss; FETs; Heterojunction bipolar transistors; Particle scattering; Region 4; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2001
Conference_Location
Notre Dame, IN, USA
Print_ISBN
0-7803-7014-7
Type
conf
DOI
10.1109/DRC.2001.937877
Filename
937877
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