DocumentCode :
3302587
Title :
An extension of McKelvey´s one-flux method to energy space
Author :
McKinnon, W.R.
Author_Institution :
Nat. Res. Council of Canada, Ottawa, Ont., Canada
fYear :
2001
fDate :
25-27 June 2001
Firstpage :
71
Lastpage :
72
Abstract :
McKelvey et al. (1961) introduced the one-flux method, based on left-going and right-going fluxes of particles, as an alternative to the drift-diffusion method in describing semiconductor devices. To study the limitations of the one-flux method, I propose an extension of the method to account for the energy of the particles. This extension, based on Bringuier´s Fokker-Planck approach to the Boltzmann equation, reduces the Boltzmann equation from momentum space to energy space.
Keywords :
Boltzmann equation; Fokker-Planck equation; semiconductor device models; Boltzmann equation; Fokker-Planck equation; energy space; one-flux method; semiconductor device model; Backscatter; Boltzmann equation; Councils; Electrons; Energy loss; FETs; Heterojunction bipolar transistors; Particle scattering; Region 4; Semiconductor devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
Type :
conf
DOI :
10.1109/DRC.2001.937877
Filename :
937877
Link To Document :
بازگشت