Title :
One dimensional electron transport and drain current quantization at 77 K in InAs heterojunction quantum wires
Author :
Yoh, K. ; Taniguchi, H. ; Kiyomi, K. ; Inoue, M. ; Sakamoto, R.
Author_Institution :
Dept. of Electr. Eng., Osaka Inst. of Technol., Japan
Abstract :
The authors have fabricated quantum wires on the InAs/AlGaSb heterostructure by utilizing electron beam lithography and wet-chemical etching. The electron confinement into quasi-one-dimensional freedom of motion was verified by magnetoresistance measurement at 4.2 K. In two terminal devices with extremely narrow channel structure, quantized drain current through drain-induced barrier lowering has been observed at 77 K. Coulomb oscillations and Coulomb staircases were seen to overlap with staircase u characteristics reflecting the small parasitic capacitance between terminals. Material, structural, and temperature effects on these devices were examined.<>
Keywords :
III-V semiconductors; aluminium compounds; electron beam lithography; etching; gallium compounds; indium compounds; magnetoresistance; quantum interference phenomena; semiconductor quantum wires; 1D electron transport; 4.2 K; 77 K; Coulomb oscillations; Coulomb staircases; InAs-AlGaSb heterojunction quantum wires; drain current quantization; drain-induced barrier lowering; electron beam lithography; electron confinement; extremely narrow channel structure; magnetoresistance; quasi-one-dimensional freedom of motion; small parasitic capacitance; two terminal devices; wet-chemical etching; Capacitance measurement; Current measurement; Electron beams; Lithography; Magnetic confinement; Magnetoresistance; Motion measurement; Quantization; Wet etching; Wires;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235300