Title :
ESD protection for high voltage LDMOS with sense FET
Author :
Choi, Y.S. ; Kim, J.J. ; Jeon, C.K. ; Kim, M.H. ; Kim, S.L. ; Kang, H.S. ; Song, C.S.
Author_Institution :
New Technol. Dev. Team, Fairchild Semicond., Konggi, South Korea
Abstract :
In order to solve the ESD problem, we propose a circuit which includes a protection diode with the collector-base shorted to the emitter of a npn transistor. Simulation results show that it is possible to add an npn CB diode in the form of a parallel circuit for relieving the ESD impact without generating the melting point of the metal.
Keywords :
electrostatic discharge; overcurrent protection; power MOSFET; semiconductor device breakdown; ESD protection; high voltage LDMOS; lateral double diffused metal oxide semiconductor; npn CB diode; npn transistor; protection diode; Circuits; Delay effects; Electrostatic discharge; Electrostatic interference; FETs; MOSFETs; Protection; Resistors; Stress; Voltage;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937879
