• DocumentCode
    3302619
  • Title

    ESD protection for high voltage LDMOS with sense FET

  • Author

    Choi, Y.S. ; Kim, J.J. ; Jeon, C.K. ; Kim, M.H. ; Kim, S.L. ; Kang, H.S. ; Song, C.S.

  • Author_Institution
    New Technol. Dev. Team, Fairchild Semicond., Konggi, South Korea
  • fYear
    2001
  • fDate
    25-27 June 2001
  • Firstpage
    75
  • Lastpage
    76
  • Abstract
    In order to solve the ESD problem, we propose a circuit which includes a protection diode with the collector-base shorted to the emitter of a npn transistor. Simulation results show that it is possible to add an npn CB diode in the form of a parallel circuit for relieving the ESD impact without generating the melting point of the metal.
  • Keywords
    electrostatic discharge; overcurrent protection; power MOSFET; semiconductor device breakdown; ESD protection; high voltage LDMOS; lateral double diffused metal oxide semiconductor; npn CB diode; npn transistor; protection diode; Circuits; Delay effects; Electrostatic discharge; Electrostatic interference; FETs; MOSFETs; Protection; Resistors; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2001
  • Conference_Location
    Notre Dame, IN, USA
  • Print_ISBN
    0-7803-7014-7
  • Type

    conf

  • DOI
    10.1109/DRC.2001.937879
  • Filename
    937879
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3302619