Title :
Temperature dependence of collector breakdown voltage and output conductance in HBT´s with AlGaAs, GaAs, InP, and InGaAs collectors
Author :
Malik, R.J. ; Feygenson, A. ; Ritter, D. ; Hamm, R.A. ; Panish, M.B. ; Nagle, J. ; Alavi, K. ; Cho, A.Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The common-emitter I-V characteristics were measured over the temperature range of 25-125 degrees C for HBTs (heterojunction bipolar transistors) with different semiconductor band-gap collectors. For In/sub 0.53/Ga/sub 0.47/As collectors, the low band-gap (0.75 eV at 25 degrees C) results in high leakage currents and low collector breakdown voltages which actually decrease with increasing temperature. In contrast, wide band-gap GaAs and AlGaAs collectors exhibit low leakage currents and high collector voltages which increase with increasing temperature. It is demonstrated that the use of an In/sub 0.53/Ga/sub 0.47/As/InP heterojunction collector results in near ideal I-V characteristics with high collector breakdown voltages (>10 V from 25-125 degrees C).<>
Keywords :
aluminium compounds; electric breakdown of solids; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; semiconductor device testing; 25 to 125 degC; AlGaAs; GaAs; HBTs; In/sub 0.53/Ga/sub 0.47/As; In/sub 0.53/Ga/sub 0.47/As-InP heterojunction collector; collector breakdown voltage; collector voltages; common-emitter I-V characteristics; heterojunction bipolar transistors; leakage currents; output conductance; semiconductor band-gap collectors; temperature dependence; Breakdown voltage; Gallium arsenide; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Leakage current; Photonic band gap; Temperature dependence; Temperature measurement;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235302
