MOMBE-grown carbon-doped base self-aligned AlGaAs/GaAs heterojunction bipolar transistors for microwave applications

Author

Ho, W.J. ; Wang, N.L. ; Pierson, R.L. ; Chang, M.F. ; Nubling, R.B. ; Higgins, J.A. ; Hersee, S. ; Ballingal, J. ; Komiak, J.

Author_Institution

Rockwell International Science Center, Thousand Oaks, CA, USA

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

801

Lastpage

804

Abstract

The authors report the first demonstration of completely MOMBE (metal-organic molecular beam epitaxy) grown carbon-doped base self-aligned AlGaAs/GaAs HBTs (heterojunction bipolar transistors) operating at microwave frequencies. Excellent DC and RF characteristics have been achieved. For a 1400-AA-thick base doped at a level of 1*10/sup 19/ cm/sup -3/, cutoff frequency f/sub T/ of 45 GHz and f/sub max/ of 90 GHz were measured from common emitter HBTs. Common base HBTs with total emitter area of 360 mu m/sup 2/ delivered 560 mW output power with 43% of power-added efficiency and 8.9 dB gain at 10 GHz. A high-power MMIC (monolithic microwave integrated circuit) amplifier operating in 8-11 GHz bandwidth has achieved 2 W output power. The device modeling based on measured S-parameters indicates that the performance can be further improved with optimal layer structure and doping profiles.<>

Keywords

III-V semiconductors; MMIC; S-parameters; aluminium compounds; bipolar integrated circuits; carbon; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; semiconductor growth; solid-state microwave devices; 10 GHz; 2 W; 43 percent; 45 GHz; 560 mW; 8 to 11 GHz; 8.9 dB; 90 GHz; AlGaAs-GaAs:C; DC characteristics; MMIC amplifier; MOMBE; RF characteristics; S-parameters; common base HBT; common emitter HBTs; cutoff frequency; device modeling; doping profiles; heterojunction bipolar transistors; layer structure; maximum frequency of oscillation; microwave applications; output power; power-added efficiency; self aligned HBT; Cutoff frequency; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit measurements; MMICs; Microwave frequencies; Molecular beam epitaxial growth; Power amplifiers; Power generation; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235303

Filename

235303