Title :
Two novel modeling methodologies for IGBT transistor
Author :
Charfi, F. ; Messaoud, M.B. ; Francois, B. ; Al-Haddad, K. ; Sellami, F.
Abstract :
To overcome the limitations of the conventional Matlab IGBT model, two model libraries for the power device (IGBT) aimed for the simulation of the power circuit tools have been proposed. To that end, we adapt the Stateflow to create the first model that consists of both control and operative parts. The Matlab Simulink environment is used to build the second model. The paper discusses the modeling methodology and describes simulation results obtained for different operation zone as well as advantages and drawbacks of the applied techniques.
Keywords :
digital simulation; electronic engineering computing; insulated gate bipolar transistors; power semiconductor devices; semiconductor device models; IGBT transistor; Matlab IGBT model; Matlab Simulink environment; Stateflow; modeling methodologies; operation zone; power circuit tools; power device; Analytical models; Automotive engineering; Circuit simulation; Computational modeling; Discrete event simulation; Insulated gate bipolar transistors; Libraries; Mathematical model; Signal synthesis; Threshold voltage;
Conference_Titel :
IECON 02 [Industrial Electronics Society, IEEE 2002 28th Annual Conference of the]
Print_ISBN :
0-7803-7474-6
DOI :
10.1109/IECON.2002.1187567
