DocumentCode
3302705
Title
Threshold voltage shift by quantum confinement in ultra-thin body device
Author
Yang-Kyu Choi ; Daewon Ha ; Tsu-Jae King ; Chenming Hu
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear
2001
fDate
25-27 June 2001
Firstpage
85
Lastpage
86
Abstract
The threshold voltage shift caused by quantum confinement in ultra-thin body devices (UTB) is observed experimentally. An analytical model is proposed and shows a good agreement with the experimental data of both PMOSFET and NMOSFET. It predicts a larger threshold voltage shift for a lighter body-doping, which is opposite to the trend in the bulk device. This threshold voltage shift must be taken into account in the design of UTB devices, including the double gate MOSFET.
Keywords
MOSFET; semiconductor device models; NMOSFET; PMOSFET; double gate MOSFET; quantum confinement; threshold voltage; ultra-thin body devices; Analytical models; Contracts; Current measurement; Doping; MOSFET circuits; Poisson equations; Potential well; Semiconductor process modeling; Thickness measurement; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2001
Conference_Location
Notre Dame, IN, USA
Print_ISBN
0-7803-7014-7
Type
conf
DOI
10.1109/DRC.2001.937884
Filename
937884
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