Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

Author

ElAfandy, R.T. ; Ng, Tien Khee ; Yang, Yang ; Cha, Dongkyu ; Bei Zhang ; Zhao, Lan ; Zhang, Meng ; Bhattacharya, Pallab ; Ooi, Boon S.

Author_Institution

Div. of Phys. Sci. & Eng., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia

fYear

2011

fDate

19-21 Dec. 2011

Firstpage

201

Lastpage

204

Abstract

Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts.

Keywords

III-V semiconductors; X-ray diffraction; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; transmission electron microscopy; wetting; GaN-InGaN-GaN-InGaN-GaN; MBE; TEM; X-ray diffraction; XRD; carrier thermalization; internal quantum efficiency; microphotoluminescence; microstructural characterization; nanostructure; optical characterization; polar quantum dots; strain induced drift; transmission electron microscopy; traps; wetting layer; Gallium nitride; Optical imaging; Optical saturation; Optical variables measurement; Size measurement; Temperature dependence; InGaN polar quantum dots; internal quantum efficiency; quantum confined stark effect; temperature dependent photoluminescence; wetting layer;

fLanguage

English

Publisher

ieee

Conference_Titel

High Capacity Optical Networks and Enabling Technologies (HONET), 2011

Conference_Location

Riyadh

Print_ISBN

978-1-4577-1170-1

Type

conf

DOI

10.1109/HONET.2011.6149817

Filename

6149817