A new and accurate quantum mechanical compact model for NMOS gate capacitance

A simple explicit analytic model is developed to generate an accurate sweep of the C-V curve from the oxide field. The quantum mechanical effects are intrinsically included in the estimation of the subband energies. Neither the substrate potential nor the polysilicon potential are pinned at any arbitrary value. So far only NMOS devices have been explicitly treated; the model will be extended to PMOS devices in the future. Work is also ongoing to allow band-bending and capacitance to be calculated directly as a function of voltage.