Simulation of InGaN/GaN MQW´s laser diodes using micro/nano multi-quantum barriers

Author

Khizar, M. ; Shah, A. ; Raja, M. Yasin Akhtar

Author_Institution

Dept. of Phys. & Opt. Sci., Univ. of North Carolina at Charlotte, Charlotte, NC, USA

fYear

2011

fDate

19-21 Dec. 2011

Firstpage

222

Lastpage

227

Abstract

A self-consistent 2D laser modeling is used to study the effect of InGaN/GaN multi-quantum barriers (MQBs) as EBL for the design and development of high power laser diode. Analytical comparisons using MQBs as EBLs have been performed. Compared to non-EBL and conventional AlGaN as EBL, noticeable improvement in the carrier confinement in the active layer and the optical gain has been obtained by using optimized MQBs structures. This is attributed due to an effective control on the spillover electrons from the junction layer into p-doped region. We found that the threshold current and the optical output power of the structures with MQBs and AlGaN as EBL exhibit improved performance at higher injected currents.

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser beams; micro-optics; nanophotonics; optical control; quantum well lasers; wide band gap semiconductors; InGaN-GaN; carrier confinement; current injection; electron-block layer; high power laser diode; junction layer; micro-multiquantum barriers; nano-multiquantum barriers; optical gain; optical output power; self-consistent 2D laser modeling; spillover electrons; threshold current; Conductors; Doping; Gallium nitride; Quantum well devices; Substrates; AlGaN as EBL; InGaN laser diode; Multi-quantum barriers (MQBs); carriers confinement; electron-block layer (EBL); optical gain; threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

High Capacity Optical Networks and Enabling Technologies (HONET), 2011

Conference_Location

Riyadh

Print_ISBN

978-1-4577-1170-1

Type

conf

DOI

10.1109/HONET.2011.6149821

Filename

6149821