• DocumentCode
    3302845
  • Title

    Commercial CMOS fabricated integrated dynamic thermal scene simulator

  • Author

    Parameswaran, M. ; Chung, R. ; Gaitan, M. ; Johnson, R.B. ; Syrzycki, Marek

  • Author_Institution
    Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
  • fYear
    1991
  • fDate
    8-11 Dec. 1991
  • Firstpage
    753
  • Lastpage
    756
  • Abstract
    The authors report a prototype integrated dynamic thermal scene simulator chip, consisting of a 2*2 array of integrated thermal pixels. The chips were fabricated using commercial CMOS processes. The micromachining process needed to create the thermally isolated structure is introduced as a maskless postprocessing step. The thermal pixel and the control electronics are designed as a module for an easy implementation of the array. Test results indicate that the pixels have a thermal time constant of 5 ms and are capable of producing an infrared output of apparent radiometric temperatures in excess of 600 degrees C and color temperatures of at least 500 degrees C. The control electronics is capable of switching within 900 ns, enabling the addressing of multiple pixels within the 200 Hz frame time required for a typical dynamic thermal scene simulation.<>
  • Keywords
    CMOS integrated circuits; display devices; infrared sources; micromechanical devices; simulation; test equipment; 2*2 array; 5 ms; 500 C; 600 C; 900 ns; IR displays; addressing of multiple pixels; color temperatures; commercial CMOS processes; control electronics; infrared output; integrated dynamic thermal scene simulator chip; integrated thermal pixels; maskless postprocessing step; micromachining process; prototype; radiometric temperatures; thermal scene generator; thermal time constant; thermally isolated structure; CMOS process; CMOS technology; Circuit simulation; Electronic equipment testing; Fabrication; Infrared heating; Integrated circuit technology; Layout; Micromachining; Temperature control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-0243-5
  • Type

    conf

  • DOI
    10.1109/IEDM.1991.235314
  • Filename
    235314