Title :
Terahertz plasma-wave excitation in 80-nm gate-length GaAs MESFET by photomixing long-wavelength CW laser sources
Author :
Otsuji, T. ; Kanamaru, Y. ; Kitamura, H. ; Nakae, S.
Author_Institution :
Dept. of Control Sci. & Eng., Kyushu Inst. of Technol., Fukuoka, Japan
Abstract :
The resonance frequency can be externally controlled which offers tunability of oscillation. The THz plasma resonant phenomena, however, has only been measured by illuminating a AlGaAs/GaAs HEMT with a single 2.5-THz gas laser source and there has been no experimental reports on the resonance frequency dependence. This paper demonstrates the first experiment on GaAs MESFETs.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; laser beam effects; microwave photonics; submillimetre wave oscillators; submillimetre wave transistors; 2.5 THz; 80 nm; GaAs; III-V semiconductors; MESFET; long-wavelength CW laser sources; oscillation tunability; photomixing; plasma resonant phenomena; resonance frequency; terahertz plasma-wave excitation; Frequency measurement; Gallium arsenide; Gas lasers; HEMTs; Laser excitation; MESFETs; Plasma measurements; Plasma sources; Resonance; Resonant frequency;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937890
