Title :
Fabrication of InP DHBTs with 0.1 /spl mu/m wide emitter
Author :
Arai, T. ; Morita, T. ; Nagatsuka, H. ; Miyamoto, Y. ; Furuya, K.
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
InP based double heterojunction bipolar transistors (DHBTs) with emitter width of 0.1 /spl mu/m are reported. Emitter mesa with vertical facet was formed by combination of CH/sub 4//H/sub 2/ reactive ion etching (RIE) and wet etching using two different HCl based solutions. Self-aligned base electrode was formed with 0.1 /spl mu/m thick InP emitter layer, by control of the lateral extent of undercut etching of less than 0.1 /spl mu/m.
Keywords :
III-V semiconductors; etching; heterojunction bipolar transistors; indium compounds; 0.1 micron; DHBTs; HCl; III V semiconductors; InP; double heterojunction bipolar transistors; emitter mesa; emitter width; lateral extent; reactive ion etching; self-aligned base electrode; undercut etching; vertical facet; wet etching; Doping; Double heterojunction bipolar transistors; Etching; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Testing; Voltage;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937891
