Title :
A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides
Author :
Liu, Z.H. ; Rosenbaum, E. ; Ko, P.K. ; Hu, C. ; Cheng, Y.C. ; Sodini, C.G. ; Gross, B.J. ; Ma, T.P.
Author_Institution :
California Univ., Berkeley, CA, USA
Abstract :
High field endurances of reoxidized-nitrided oxide (RNO), and fluorinated oxide (FOX) under dynamic Fowler-Nordheim stress were compared with that of conventional oxide. Time-dependent dielectric breakdown (TDDB) of RNO and FOX is shown to be strongly dependent on frequency, and lifetime under high frequency stress is longer than that under DC stress. RNO and FOX display interface hardness under high field injection at all frequencies. Interface trap generation is not a strong function of frequency in any of the oxides studied. Examination of charge trapping indicates that frequency-dependent hole trapping is responsible for the frequency dependence of TDDB.<>
Keywords :
dielectric thin films; electric breakdown of solids; insulated gate field effect transistors; reliability; DC stress; FOX; RNO; TDDB; charge trapping; conventional oxides; dynamic Fowler-Nordheim stress; effect of dynamic stressing; fluorinated oxide; frequency-dependent hole trapping; high field injection; high frequency stress; high-field endurance; interface hardness; interface trap generation; reoxidized-nitrided oxide; time dependent dielectric breakdown; Annealing; Breakdown voltage; Capacitance-voltage characteristics; Current measurement; Electric breakdown; Frequency dependence; Impact ionization; Monitoring; Stability; Stress;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235321
