Title :
Binary-decision-diagram quantum circuits based on Schottky wrap gate control of GaAs honeycomb nanowires
Author :
Kasai, Seiya ; Hasegawa, Hideki
Author_Institution :
Res. Centerfor Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan
Abstract :
Proposes and investigates a novel realistic approach for quantum integrated circuits which implements a binary-decision-diagram (BDD) logic architecture by a quantum device architecture based on Schottky wrap gate (WPG) control of GaAs honeycomb nanowire arrays. The WPG structure shown has features of tight gate control, strong electron confinement, device design flexibility and a simple lateral structure suitable for planar integration.
Keywords :
III-V semiconductors; Schottky effect; binary decision diagrams; gallium arsenide; nanotechnology; quantum gates; semiconductor quantum wires; single electron transistors; GaAs; III V semiconductors; Schottky wrap gate control; WPG structure; binary-decision-diagram logic; design flexibility; electron confinement; honeycomb nanowire arrays; lateral structure; planar integration; quantum device architecture; quantum integrated circuits; tight gate control; Binary decision diagrams; Circuits; Electrons; Gallium arsenide; Logic arrays; Logic devices; Logic functions; Nanobioscience; Nanowires; Wire;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937901
