Binary-decision-diagram quantum circuits based on Schottky wrap gate control of GaAs honeycomb nanowires

Author

Kasai, Seiya ; Hasegawa, Hideki

Author_Institution

Res. Centerfor Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan

fYear

2001

fDate

25-27 June 2001

Firstpage

131

Lastpage

132

Abstract

Proposes and investigates a novel realistic approach for quantum integrated circuits which implements a binary-decision-diagram (BDD) logic architecture by a quantum device architecture based on Schottky wrap gate (WPG) control of GaAs honeycomb nanowire arrays. The WPG structure shown has features of tight gate control, strong electron confinement, device design flexibility and a simple lateral structure suitable for planar integration.

Keywords

III-V semiconductors; Schottky effect; binary decision diagrams; gallium arsenide; nanotechnology; quantum gates; semiconductor quantum wires; single electron transistors; GaAs; III V semiconductors; Schottky wrap gate control; WPG structure; binary-decision-diagram logic; design flexibility; electron confinement; honeycomb nanowire arrays; lateral structure; planar integration; quantum device architecture; quantum integrated circuits; tight gate control; Binary decision diagrams; Circuits; Electrons; Gallium arsenide; Logic arrays; Logic devices; Logic functions; Nanobioscience; Nanowires; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2001

Conference_Location

Notre Dame, IN, USA

Print_ISBN

0-7803-7014-7

Type

conf

DOI

10.1109/DRC.2001.937901

Filename

937901