Title :
Accurate and efficient two-dimensional modeling of boron implantation into single-crystal silicon
Author :
Klein, K.M. ; Park, C. ; Yang, S.-H. ; Tasch, A.F.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
A novel, computationally efficient two-dimensional implant model has been developed for boron implantation into single-crystal silicon. This model accurately and efficiently models the depth profiles and lateral doping profiles under a masking edge for implantations as a function of dose, tilt angle, rotation angle, orientation of the masking edge, and masking layer thickness, in addition to energy. This two-dimensional model is based on the dual Pearson model for one-dimensional dopant depth distributions and the UT-MARLOWE Monte Carlo ion implantation simulation code. The model can accurately predict profiles for energies from 15-80 keV, doses from 10/sup 12/-10/sup 16/ cm/sup -2/, tilt angles from 0-10 degrees , rotation angles from 0-360 degrees , and masking edges parallel to both the
Keywords :
Monte Carlo methods; boron; digital simulation; doping profiles; electronic engineering computing; elemental semiconductors; ion implantation; semiconductor process modelling; silicon; 15 to 80 keV; Monte Carlo ion implantation simulation; SUPREM IV; UT-MARLOWE; crystalline Si:B; depth profiles; dose; dual Pearson model; ion energy; lateral doping profiles; mask edge orientation; masking edge; masking layer thickness; retrofitted; rotation angle; tilt angle; two-dimensional implant model; two-dimensional modeling; two-dimensional process simulation codes; Amorphous materials; Boron; Computational modeling; Doping profiles; Implants; Ion implantation; Monte Carlo methods; Scattering; Semiconductor process modeling; Silicon;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235327
