Accurate and efficient two-dimensional modeling of boron implantation into single-crystal silicon

A novel, computationally efficient two-dimensional implant model has been developed for boron implantation into single-crystal silicon. This model accurately and efficiently models the depth profiles and lateral doping profiles under a masking edge for implantations as a function of dose, tilt angle, rotation angle, orientation of the masking edge, and masking layer thickness, in addition to energy. This two-dimensional model is based on the dual Pearson model for one-dimensional dopant depth distributions and the UT-MARLOWE Monte Carlo ion implantation simulation code. The model can accurately predict profiles for energies from 15-80 keV, doses from 10/sup 12/-10/sup 16/ cm/sup -2/, tilt angles from 0-10 degrees , rotation angles from 0-360 degrees , and masking edges parallel to both the