Title :
MICROX-an advanced silicon technology for microwave circuits up to X-band
Author :
Agarwal, A.K. ; Driver, M.C. ; Hanes, M.H. ; Hobgood, H.M. ; McMullin, P.G. ; Nathanson, H.C. ; O´Keeffe, T.W. ; Smith, T.J. ; Szedon, J.R. ; Thomas, R.N.
Author_Institution :
Westinghouse Science & Technology Center, Pittsburgh, PA, USA
Abstract :
An advanced silicon technology is presented which is capable of producing highly reliable and affordable MMICs (monolithic microwave integrated circuits) integrated with high-speed CMOS digital functions as replacements for costly GaAs hybrids currently used in systems up to X-band. The technology involves high-resistivity substrates. SIMOX (separation by implanted oxygen) processing, metal reinforced wide (100- mu m) by very short (0.3-0.5- mu m) polysilicon gates with multiple fingers, air-bridge technology, and other techniques to improve the high-speed performance by reducing parasitic elements and maintaining the substrate resistivity during the fabrication process. The technology has resulted in n-channel device cut-off frequencies (f/sub max/) of 21 GHz, with 40-GHz capability predicted by modeling.<>
Keywords :
CMOS integrated circuits; MMIC; MOS integrated circuits; SIMOX; elemental semiconductors; mixed analogue-digital integrated circuits; silicon; 0.3 to 0.5 micron; 100 micron; 21 GHz; MICROX; MMICs; SIMOX; Si; X-band; air-bridge technology; cut-off frequencies; high-resistivity substrates; high-speed CMOS digital functions; high-speed performance; metal reinforced polysilicon gates; microwave and digital circuits integration; microwave circuits; monolithic microwave integrated circuits; multiple fingers gates; semiconductors; separation by implanted oxygen; CMOS digital integrated circuits; CMOS integrated circuits; CMOS technology; Hybrid integrated circuits; Integrated circuit reliability; Integrated circuit technology; MMICs; Microwave circuits; Microwave technology; Silicon;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235329
