DocumentCode :
3303140
Title :
Quasi-magnetic fields revisited: second-order transport effects in graded semiconductors
Author :
Frensley, W.R.
Author_Institution :
Texas Univ., Richardson, TX, USA
fYear :
2001
fDate :
25-27 June 2001
Firstpage :
141
Lastpage :
142
Abstract :
When Kroemer (1957) introduced the concept of quasi-electric fields to describe the effects of graded semiconductors on carrier transport, he also discussed a "quasi-magnetic field" effect which occurs if the energy-band minimum shifts within the Brillouin zone as the alloy composition is varied. As heterostructure technology has developed in the subsequent forty years, such behavior of the energy-band structure has not been observed, and the quasi-magnetic field concept has largely been forgotten. However, a careful rederivation of the heterostructure drift-diffusion equation from the Boltzmann transport equation has revealed another quasi-magnetic field effect of the second order.
Keywords :
Boltzmann equation; Brillouin zones; Hall effect; diffusion; semiconductors; Boltzmann transport equation; Brillouin zone; alloy composition; drift-diffusion equation; energy-band minimum; energy-band structure; graded semiconductors; heterostructure technology; quasi-magnetic field; second-order transport effects; Boltzmann equation; Carrier confinement; Current density; Effective mass; Electrical capacitance tomography; Electron mobility; Heterojunctions; Magnetic confinement; Motion detection; Virtual manufacturing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
Type :
conf
DOI :
10.1109/DRC.2001.937906
Filename :
937906
Link To Document :
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