DocumentCode
3303168
Title
Analysis of p/sup +/ poly Si double-gate thin-film SOI MOSFETs
Author
Tanaka, T. ; Horie, H. ; Ando, S. ; Hijiya, S.
Author_Institution
Fujitsu Lab. Ltd., Atsugi, Japan
fYear
1991
fDate
8-11 Dec. 1991
Firstpage
683
Lastpage
686
Abstract
The authors have fabricated planar p/sup +/ poly Si double-gate thin-film SOI (silicon-on-insulator) nMOSFETs using wafer bonding. The fabricated devices have shown a transconductance, Gm, exceeding twice that of the single-gate SOI-MOSFET. It was confirmed that conduction in the double-gate SOI MOSFET originates from a fully flat potential and charge injection. An analytical model developed by the authors has displayed electrical characteristics that agree well with those of the fabricated devices.<>
Keywords
insulated gate field effect transistors; semiconductor-insulator boundaries; wafer bonding; SOI-MOSFET; analytical model; charge injection; double-gate SOI MOSFET; electrical characteristics; fully flat potential; polycrystalline Si; thin-film SOI MOSFETs; transconductance; wafer bonding; Analytical models; Electric variables; Electrodes; Fabrication; MOSFETs; Semiconductor thin films; Transconductance; Transistors; Voltage; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0243-5
Type
conf
DOI
10.1109/IEDM.1991.235330
Filename
235330
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