Title :
High-speed waveguide avalanche photodetectors
Author :
Kinsey, G.S. ; Sidhu, R. ; Holmes, A.L., Jr. ; Campbell, J.C. ; Dentai, A.G.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Avalanche photodetectors are becoming increasingly attractive as a means to boost sensitivity in optical communications systems. An edge-coupled waveguide configuration allows the absorption region to be thinned in order to reduce carrier transit times without compromising sensitivity. An AlGaAs/GaAs waveguide avalanche photodetector (WG-A-PD) was demonstrated with a maximum bandwidth of 32 GHz and a gain-bandwidth product of 110 GHz. An InGaAs/InAlAs waveguide avalanche photodetector was demonstrated with a bandwidth of 28 GHz at low gains and an external quantum efficiency of 16% at 1.55 /spl mu/m. The gain-bandwidth product of 320 GHz is the highest reported for an APD.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; optical waveguide components; photodetectors; 1.55 micron; 16 percent; 28 GHz; 32 GHz; AlGaAs-GaAs; InGaAs-InAlAs; bandwidth; carrier transit time; edge-coupled waveguide; external quantum efficiency; gain-bandwidth product; high-speed response; sensitivity; waveguide avalanche photodetector; Absorption; Bandwidth; Gallium arsenide; High speed optical techniques; Indium gallium arsenide; Microelectronics; Optical noise; Optical sensors; Optical waveguides; Photodetectors;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937908
