Normal-incident In/sub 0.2/Ga/sub 0.8/As/GaAs quantum well infrared photodetector employing a p-i-n-i-p camel diode structure

Author

Heesoo Son ; Jinsung Park ; Songcheol Hong ; Sung-June Jo ; Jong-In Song

Author_Institution

Dept. of Electrical Eng. & Comput. Sci., KAIST, Taejon, South Korea

fYear

2001

fDate

25-27 June 2001

Firstpage

157

Lastpage

158

Abstract

A normal-incident In/sub 0.2/Ga/sub 0.8/As/GaAs quantum well infrared photodetector (QWIP) utilizing the hole intersubband transitions having the detectivity as high as 4.4/spl times/10/sup 10/ cm Hz/sup 1/2//W has been demonstrated. The improvement in the detectivity is ascribed to the reduction in the dark current achieved by using a p-i-n-i-p camel diode structure. Further improvement in detectivity is expected by increasing the responsivity of the detector, which can be achieved by doping the quantum wells with a p-type dopant and increasing the period of MQW.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodiodes; quantum well devices; In/sub 0.2/Ga/sub 0.8/As-GaAs; MQW structure; dark current; detectivity; hole intersubband transition; normal-incident In/sub 0.2/Ga/sub 0.8/As/GaAs quantum well infrared photodetector; p-i-n-i-p camel diode; p-type dopant; responsivity; Absorption; Dark current; Diodes; Electrons; Epitaxial layers; Gallium arsenide; Infrared detectors; Photoconductivity; Photodetectors; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2001

Conference_Location

Notre Dame, IN, USA

Print_ISBN

0-7803-7014-7

Type

conf

DOI

10.1109/DRC.2001.937912

Filename

937912