Title :
An accurate model of thin film SOI-MOSFET breakdown voltage
Author :
Chen, J. ; Assaderaghi, F. ; Wann, H.-J. ; Ko, P. ; Hu, C. ; Cheng, P. ; Solomon, R. ; Chan, T.-Y.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A quantitative model which relates the SOI (silicon-on-insulator) MOSFET breakdown voltage to key parameters such as channel length, SOI film thickness, and gate voltage is presented. The SOI breakdown is caused by electron impact ionization current produced near the drain which is subsequently amplified by a parasitic lateral bipolar transition. This model is based on analytic modeling, quasi-2-D simulation and experimental study of the maximum drain electric field in SOI, and a novel method for measuring the lateral BJT (bipolar junction transistor) current gain beta using GIDL (gate-induced drain leakage) current. It can accurately model the breakdown voltage within 0.2 V for different channel lengths, gate voltages, and SOI film thicknesses.<>
Keywords :
electric breakdown of solids; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; GIDL; SOI breakdown; SOI film thickness; SOI-MOSFET breakdown voltage; analytic modeling; channel length; current gain; electron impact ionization current; experimental study; gate voltage; gate-induced drain leakage; key parameters; lateral BJT; maximum drain electric field; model; parasitic lateral bipolar transition; quasi-2-D simulation; Analytical models; Breakdown voltage; Current measurement; Electric breakdown; Electrons; Impact ionization; MOSFET circuits; Semiconductor films; Silicon on insulator technology; Transistors;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235333
