Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials

fYear

1997

fDate

11-15 May 1997

Abstract

The following topics were dealt with: power devices; vertical cavity lasers and optoelectronic devices; epitaxy; optoelectronics; characterization and control; processing; electron devices; HEMTs; InP integrated circuits and applications; bulk and quantum well structures; bulk and semi-insulating materials; new materials and quantum structures; integrated receivers and detectors; electronic device processing technology; epitaxy - new sources; novel material structures for InGaAsP/InP lasers; photonic device processing technology; selective-area epitaxy/regrowth; HBT devices; and integrated laser structures

Keywords

III-V semiconductors; indium compounds; optoelectronic devices; semiconductor devices; semiconductor growth; semiconductor lasers; semiconductor technology; HBT devices; HEMT; InGaAsP-InP; InGaAsP/InP lasers; InP; InP integrated circuits; bulk materials; characterization; control; electron devices; electronic device processing technology; epitaxy; integrated detectors; integrated laser structures; integrated receivers; new sources; novel material structures; optoelectronic devices; optoelectronics; photonic device processing technology; power devices; processing; quantum structures; quantum well structures; regrowth; selective-area epitaxy; semi-insulating materials; vertical cavity lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA, USA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.13228

Filename

13228