Floating-body effect free concave SOI-MOSFETs (COSMOS)

Author

Hieda, K. ; Takedai, S. ; Takahashi, M. ; Yoshimi, M. ; Takato, H. ; Nitayama, A. ; Horiguchi, F.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

667

Lastpage

670

Abstract

In order to overcome the degradation induced by floating body effects and to suppress the increase in parasitic source/drain resistances in thin-film silicon-on-insulator (SOI) MOSFETs, a concave SOI-MOSFET (COSMOS) is proposed. This structure realizes a partially thin-film SOI region, which is used as a fully depleted channel, and thick-film SOI regions, which are used as source/drain. The unique features of the COSMOS are found to be (1) elimination of the floating-body effects, (2) less short channel effect, (3) excellent subthreshold characteristics, and (4) reduction in parasitic source/drain resistances.<>

Keywords

insulated gate field effect transistors; semiconductor-insulator boundaries; COSMOS; concave SOI-MOSFETs; features; floating body effect suppression; fully depleted channel; parasitic resistance suppression; partially thin-film SOI region; short channel effect suppression; subthreshold characteristics; thick-film SOI regions; Contact resistance; Doping; Electric breakdown; Immune system; Impact ionization; Impurities; Length measurement; MOSFET circuits; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235334

Filename

235334