DocumentCode
3303262
Title
Spin-orbit interaction of 2/spl deg/ in InAlAS/InAs heterostructures
Author
Yoh, K. ; Doi, T. ; Abe, S.I. ; Katano, Y. ; Ohno, H. ; Sueoka, K. ; Mukasa, K.
Author_Institution
Hokkaido Univ., Japan
fYear
2001
fDate
25-27 June 2001
Firstpage
163
Abstract
Summary form only given. We report the transport characterization of In/sub 0.8/Al/sub 0.2/As/InAs heterostructures grown on p-type InAs substrate. Shubnikov de Haas oscillation of the InAs surface inversion layer was successfully measured by improved heterointerface quality and reduced interband tunneling current. As a result, spin-orbit interaction was estimated through Rashba oscillation.
Keywords
III-V semiconductors; Shubnikov-de Haas effect; aluminium compounds; indium compounds; semiconductor heterojunctions; spin-orbit interactions; tunnelling; In/sub 0.8/Al/sub 0.2/As-InAs; Rashba oscillation; Shubnikov de Haas oscillation; heterostructure; interband tunneling current; interface quality; spin-orbit interaction; surface inversion layer; Buffer layers; Current measurement; Electrons; Indium compounds; Leakage current; Molecular beam epitaxial growth; Photonic band gap; Semiconductor materials; Substrates; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2001
Conference_Location
Notre Dame, IN, USA
Print_ISBN
0-7803-7014-7
Type
conf
DOI
10.1109/DRC.2001.937914
Filename
937914
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