Title :
A novel high-performance lateral bipolar on SOI
Author :
Shahidi, G.G. ; Tang, D.D. ; Davari, B. ; Taur, Y. ; McFarland, P. ; Jenkins, K. ; Danner, D. ; Rodriguez, M. ; Megdanis, A. ; Petrillo, E. ; Polcari, M. ; Ning, T.H.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A novel lateral bipolar structure on SOI (silicon-on-insulator) is described. This device has a thin double-diffused base and a narrow emitter width, determined by the SOI thickness. It has minimal parasitic junction capacitance, as well as minimal emitter and collector resistances. Excellent device characteristics and an f/sub T/ of about 20 GHz were demonstrated.<>
Keywords :
bipolar transistors; capacitance; semiconductor-insulator boundaries; 20 GHz; SOI; Si-SiO/sub 2/; collector resistances; cut-off frequency; device characteristics; emitter resistance; lateral bipolar structure; narrow emitter width; parasitic junction capacitance; thin double-diffused base; BiCMOS integrated circuits; Contact resistance; Delay effects; Doping; Electric breakdown; Fabrication; Implants; MOSFETs; Parasitic capacitance; Silicon on insulator technology;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235335
