Title :
A new three dimensional IC fabrication technology, stacking thin film DUAL-CMOS layers
Author :
Hayashi, Y. ; Oyama, K. ; Takahashi, S. ; Wada, S. ; Kajiyana, K. ; Koh, R. ; Kunio, T.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
A novel 3-D IC has been developed in which electrical function blocks of thin-film dual-active-device-layer (DUAL) CMOS ICs are bonded cumulatively. In the DUAL-CMOS ICs, pMOSFETs are stacked on nMOSFETs by using a laser beam annealing technique. By mechano-chemical polishing, the IC substrates are thinned, and then joined together. Operation of function blocks such as an inverter and ring oscillator stacked in the 3-D IC is confirmed.<>
Keywords :
CMOS integrated circuits; integrated circuit technology; integrated logic circuits; logic gates; oscillators; 3-D IC; CMOS ICs; IC substrate thinning; dual-active-device-layer; function blocks; inverter; laser beam annealing; mechano-chemical polishing; ring oscillator; stacking thin film DUAL-CMOS layers; Annealing; Bonding; CMOS technology; Laser beams; MOSFETs; Optical device fabrication; Ring lasers; Stacking; Three-dimensional integrated circuits; Transistors;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235336
