Nano-transistor modeling: two dimensional Green´s function method

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green´s function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Acoustic phonon scattering is included, causing transport to deviate from ballistic in a realistic manner. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Self consistent solution of Poisson-NEGF equations is numerically intensive because of the number of spatial and energy coordinates involved. This makes the use of parallel/distributed computing imperative.