Title :
Quantitative prediction of threshold voltage fluctuations in sub-100 nm MOSFETs by a new dopant model
Author :
Yamamoto, H. ; Okada, Y. ; Sano, N.
Author_Institution :
Inst. of Appl. Phys., Tsukuba Univ., Ibaraki, Japan
Abstract :
In the present paper, threshold voltage fluctuations in sub-100 nm MOSFETs are studied in a predictable manner by employing a new dopant model that explicitly splits the long-range and short-range potentials of dopants. The threshold voltage fluctuations have been investigated by 3-D drift-diffusion simulations. After demonstrating the validity of the present dopant model, the standard deviation of threshold voltages for sub-100 nm MOSFETs has been reliably estimated.
Keywords :
MOSFET; fluctuations; semiconductor device models; 100 nm; 3-D drift-diffusion simulations; MOSFETs; dopant model; long-range potentials; short-range potentials; standard deviation; threshold voltage fluctuation; Analytical models; Doping; Electronic mail; Fluctuations; Large scale integration; MOSFETs; Physics; Predictive models; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937919
