• DocumentCode
    3303397
  • Title

    Rare-earth doped GaN electroluminescent devices for robust flat panel displays

  • Author

    Heikenfeld, J. ; Stecki, A.J.

  • Author_Institution
    Nanoelectronics Lab, Cincinnati Univ., OH, USA
  • fYear
    2001
  • fDate
    25-27 June 2001
  • Firstpage
    177
  • Lastpage
    178
  • Abstract
    The authors discuss the improvements required to make GaN:RE AC-ELDs overtake ZnS-based AC ELDs and possibly other flat panel devices (FPD) devices. Similar to the potential of other AC-ELD technologies, advances in GaN:RE AC-ELDs could be strongly considered for applications such as flat TVs.
  • Keywords
    III-V semiconductors; electroluminescent displays; flat panel displays; gallium compounds; phosphors; rare earth metals; wide band gap semiconductors; FPD devices; GaN; GaN:RE AC-ELDs; electroluminescent display devices; flat TVs; flat panel displays; rare earth doped GaN phosphors; Brightness; Chemicals; Electroluminescent devices; Flat panel displays; Frequency; Gallium nitride; Glass; Phosphors; Robustness; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2001
  • Conference_Location
    Notre Dame, IN, USA
  • Print_ISBN
    0-7803-7014-7
  • Type

    conf

  • DOI
    10.1109/DRC.2001.937921
  • Filename
    937921
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3303397