Title :
CMOS polysilicon circuits on flexible steel substrates
Author :
Wu, Ming ; Wagner, Sigurd
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
We present results of a new technique for fabricating CMOS polycrystalline silicon (polysilicon) thin film transistor circuits on a flexible substrate. The polysilicon film is formed by thermally annealing amorphous silicon films deposited on steel foil substrates. The high temperature tolerance of steel allows furnace crystallization at 750/spl deg/C in 2 minutes.
Keywords :
CMOS integrated circuits; annealing; crystallisation; elemental semiconductors; silicon; thin film transistors; 750 C; CMOS circuit; Si; flexible steel foil substrate; furnace crystallization; polysilicon thin film transistor; thermal annealing; Amorphous silicon; Annealing; CMOS technology; Flexible printed circuits; Furnaces; Semiconductor films; Steel; Substrates; Temperature; Thin film transistors;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937925
