Simulation of multiply connected current-voltage characteristics in charge injection transistors

Mappings of I-V space for charge injection transistors are obtained from device simulations. Using transport models which self-consistently incorporate electron energy and real-space transfer (RST) currents over heterostructure interfaces, multiply connected, self-intersecting I-V curves are obtained through the use of predictor-corrector continuation. These complex phase mappings help explain experimentally observed nonlinearities and suggest new regimes of device operation and application. The analysis suggests that the loops and folds in I-V space, which cannot be continuously traced in measurements (or conventional simulations), are responsible for the nonlinear steps observed after the onset of RST in experiments. These results can be reproduced qualitatively by any transport model which incorporates RST self-consistently.<>