Title :
Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes
Author :
Hsu, P.I. ; Gleskova, H. ; Suo, Z. ; Wagner, S. ; Sturm, J.C.
Author_Institution :
Center for Photonics & Optoelectronic Mater., Princeton Univ., NJ, USA
Abstract :
In this paper we report the first transistors fabricated on a substrate that is then plastically deformed. Using amorphous silicon (a-Si) device islands on a polyimide substrate, TFTs can withstand an average substrate strain of 6%, as the substrate is deformed into a spherical cap shape subtending angles as large as 66/spl deg/ (1 steradian solid angle).
Keywords :
amorphous semiconductors; elemental semiconductors; plastic deformation; silicon; substrates; thin film transistors; 3D shape; Si; amorphous silicon TFT; large-area electronics; plastic deformation; polyimide substrate; Amorphous materials; Amorphous silicon; Capacitive sensors; Fabrication; Plastics; Polyimides; Sensor arrays; Shape; Substrates; Thin film transistors;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937928
