Title :
Quantum-mechanical threshold voltage shifts of MOSFETs caused by high levels of channel doping
Author :
van Dort, M.J. ; Woerlee, P.H. ; Walker, A.J. ; Juffermans, C.A.H. ; Lifka, H.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
The impact of high doping levels on the threshold voltage of MOS transistors is discussed. The threshold voltage of surface channel devices is shown to be affected through the quantum-mechanical splitting of the energy levels in the conduction band. A significant threshold voltage shift is reported at room temperature for deep-submicron n-channel devices and needs to be taken into account in the design of the devices. A simple analytical model to account for this effect is proposed.<>
Keywords :
conduction bands; insulated gate field effect transistors; semiconductor device models; semiconductor doping; MOS transistors; MOSFET; channel doping; conduction band; deep-submicron n-channel devices; energy levels; high doping levels; model; quantum-mechanical splitting; surface channel devices; threshold voltage shifts; Doping; Electrons; Laboratories; MOS devices; MOSFETs; Performance evaluation; Semiconductor device modeling; Semiconductor process modeling; Temperature; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235348
