Title :
Linearity of high Al-content AlGaN/GaN HEMTs
Author :
Jenkins, T. ; Kehias, L. ; Parikh, P. ; Wu, Y.F. ; Chavarkar, P. ; Moore, M. ; Mishra, U.
Author_Institution :
Air Force Res. Lab., Wright-Patterson AFB, OH, USA
Abstract :
This work will address the advancements in the linearity of AlGaN/GaN HEMTs. This is the first reported linearity result for high-Al content devices, and it is the first reported result of linearity for nitride-based HEMTs under both transmitter and receiver types of conditions. When the device technology matures, it will have commercial and military applications in wireless base stations, satellite communications, and radar.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT; linearity; receiver; transmitter; Aluminum gallium nitride; Base stations; Gallium nitride; HEMTs; Linearity; MODFETs; Military communication; Radar applications; Satellite communication; Transmitters;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937931
