DocumentCode
3303546
Title
Linearity of high Al-content AlGaN/GaN HEMTs
Author
Jenkins, T. ; Kehias, L. ; Parikh, P. ; Wu, Y.F. ; Chavarkar, P. ; Moore, M. ; Mishra, U.
Author_Institution
Air Force Res. Lab., Wright-Patterson AFB, OH, USA
fYear
2001
fDate
25-27 June 2001
Firstpage
201
Lastpage
202
Abstract
This work will address the advancements in the linearity of AlGaN/GaN HEMTs. This is the first reported linearity result for high-Al content devices, and it is the first reported result of linearity for nitride-based HEMTs under both transmitter and receiver types of conditions. When the device technology matures, it will have commercial and military applications in wireless base stations, satellite communications, and radar.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT; linearity; receiver; transmitter; Aluminum gallium nitride; Base stations; Gallium nitride; HEMTs; Linearity; MODFETs; Military communication; Radar applications; Satellite communication; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2001
Conference_Location
Notre Dame, IN, USA
Print_ISBN
0-7803-7014-7
Type
conf
DOI
10.1109/DRC.2001.937931
Filename
937931
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