Title :
Demonstration of push-pull operation of AlGaN/GaN HEMTs on SiC
Author :
Lee, Jong-Wook ; Lee, Sungjae ; Webb, Kevin J.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
We report the first demonstration of Class B push-pull operation of AlGaN/GaN HEMTs on SiC substrates, thereby taking advantage of lower thermal dissipation while achieving linear operation and allowing higher power density in large-area devices. This lower thermal dissipation can be achieved because of the potentially higher power-added-efficiency (PAE) of Class B operation, relative to Class A operation.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; power HEMT; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT; Class B operation; SiC; SiC substrate; large-area device; linear operation; power density; power-added efficiency; push-pull operation; thermal dissipation; Aluminum gallium nitride; Gain measurement; Gallium nitride; HEMTs; Impedance matching; MODFETs; Power generation; Power measurement; Silicon carbide; Thermal conductivity;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937932
