Title :
On development of 600-850 V 6H-SiC LDMOS transistors using silane-ambient implant anneal
Author :
Sankin, I. ; Casady, J.B. ; Dufrene, J.B. ; Draper, W.A. ; Kretchmer, J. ; Vandersand, J. ; Kumar, V. ; Mazzola, M.S. ; Saddow, S.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Mississippi State Univ., MS, USA
Abstract :
In this work, we report on development of 600-850 V SiC LDMOSFET´s, which for the first time utilize silane-overpressure implant annealing, in comparison to earlier works. A 2-D model using Medici/sup TM/ software from Avant! Corporation was used to optimize the structure, and a modified implant anneal with silane overpressure was used to improve the surface morphology of implanted regions. Further, drain and gate electrode extensions were used to increase the blocking voltage.
Keywords :
annealing; ion implantation; power MOSFET; semiconductor device models; silicon compounds; wide band gap semiconductors; 2D model; 600 to 850 V; 6H-SiC LDMOS transistor; Avant! Corporation; Medici software; SiC; blocking voltage; silane-overpressure implant annealing; surface morphology; Annealing; Electrodes; Fingers; Implants; Rough surfaces; Silicon carbide; Surface morphology; Surface roughness; Temperature control; Voltage;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937933
