DocumentCode
3303579
Title
An X-band silicon carbide IMPATT diode
Author
Luo Yuan ; Melloch, M.R. ; Cooper, J.A., Jr. ; Webb, K.J.
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
2001
fDate
25-27 June 2001
Firstpage
207
Lastpage
208
Abstract
IMPact-ionization-Avalanche-Transit-Time (IMPATT) diodes are widely used as microwave sources in transmitters in pulsed radar systems. Under pulsed conditions, the peak output power of an IMPATT diode at a given frequency is limited by its underlying material properties. Due to the high breakdown field and high electron saturation velocity of silicon carbide (SiC), a SiC IMPATT diode is expected to produce microwave power at least 100 times higher than Si or GaAs IMPATT diodes. We reported the first demonstration of a SiC IMPATT diode last year. In this work, the microwave characteristics of the diode are presented.
Keywords
IMPATT diodes; microwave diodes; silicon compounds; wide band gap semiconductors; SiC; X-band; microwave characteristics; silicon carbide IMPATT diode; Diodes; Electric breakdown; Electrons; Frequency; Gallium arsenide; Material properties; Power generation; Radar; Silicon carbide; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2001
Conference_Location
Notre Dame, IN, USA
Print_ISBN
0-7803-7014-7
Type
conf
DOI
10.1109/DRC.2001.937934
Filename
937934
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