A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology

Author

Nanba, Mitsuo ; Kobayashi, Takashi ; Uchino, Takashi ; Nakamura, Tohru ; Kondo, Masao ; Tamaki, Yohichi ; Iijima, Shimpei ; Kure, Tokuo ; Tanabe, Masamichi

Author_Institution

Hitachi Ltd., Gunma, Japan

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

443

Lastpage

446

Abstract

A high-performance bipolar transistor technology has been developed for emitter formation using in-situ phosphorus doped polysilicon (IDP). Using this technology, a Si bipolar transistor was designed with a shallow emitter junction, an ultra-high current gain, and a cutoff frequency (f/sub T/) of 64 GHz. Furthermore, the product of f/sub T/ and BV ceo of 200 GHz-V has been achieved. This value is nearly equal to the physical limitation for homojunction silicon transistors. The technology reported here is believed to be very promising for future fabrication of ultra-high-speed high-density bipolar and BiCMOS VLSIs.<>

Keywords

BiCMOS integrated circuits; VLSI; bipolar integrated circuits; bipolar transistors; elemental semiconductors; integrated circuit technology; phosphorus; semiconductor doping; silicon; 64 GHz; BiCMOS; Si bipolar transistor; Si:P; VLSIs; cutoff frequency; high-density; in-situ P doping; polysilicon emitter technology; semiconductors; shallow emitter junction; ultra-high current gain; ultra-high-speed; Amorphous silicon; Bipolar transistors; Conductivity; Cutoff frequency; Design engineering; Etching; Fabrication; Isolation technology; Laboratories; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235360

Filename

235360