Hot carrier induced photon emission in submicron GaAs devices

Author

Tedesco, C. ; Manfredi, M. ; Paccagnella, A. ; Zanoni, E. ; Canali, C.

Author_Institution

Dipartimento di Elettronica e Inf., Padova, Italy

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

437

Lastpage

440

Abstract

The authors present a study of impact ionization phenomena in GaAs MESFETs and AlGaAs-GaAs HEMTs (high electron mobility transistors) occurring at high drain voltages. This analysis has been performed by analyzing the gate current due to the collection of holes generated by impact ionization and light emission. The authors present the relationship of gate current with simulated electric field in the channel, the electroluminescence spectra in the 1.1-3.1-eV energy range, and the correlation of integrated light intensity with the product of the electron and hole current which suggests that the recombination process is the main mechanism for visible light emission.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; electroluminescence; electron-hole recombination; gallium arsenide; high electron mobility transistors; hot carriers; impact ionisation; visible spectra of inorganic solids; 1.1 to 3.1 eV; AlGaAs-GaAs; HEMTs; MESFETs; electroluminescence spectra; electron current; gate current; high drain voltages; high electron mobility transistors; hole current; hot carrier induced photon emission; impact ionization; integrated light intensity; recombination process; semiconductors; simulated electric field; submicron GaAs devices; visible light emission; Charge carrier processes; Electroluminescence; Gallium arsenide; HEMTs; Hot carriers; Impact ionization; MESFETs; MODFETs; Performance analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235361

Filename

235361