Title :
The advancement of solid-state microwave and optoelectronic devices
Author :
Ping, Zhao Zheng ; Shuanqing, Li
Author_Institution :
Hebei Semicond. Res. Inst., Shijiazhuang, China
Abstract :
In this article the advancement of China´s microwave devices and opto-electronic devices will be described from the aspects of Si, GaAs and InP.
Keywords :
microwave devices; optoelectronic devices; China; GaAs; InP; Si; solid-state microwave devices; solid-state optoelectronic devices; Broadband amplifiers; Frequency; Gallium arsenide; Microwave devices; Optoelectronic devices; Power amplifiers; Power generation; Semiconductor devices; Solid state circuits; Switches;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN :
0-7803-7486-X
DOI :
10.1109/ICMMT.2002.1187628
