• DocumentCode
    3303844
  • Title

    "RF-SoC": low-power single-chip radio design using Si/SiGe BiCMOS technology

  • Author

    Lie, D.Y.C. ; Yuan, Xiaojuen ; Larson, L.E. ; Wang, Y.H. ; Senior, A. ; Mecke, J.

  • Author_Institution
    IBM Encinitas RFIC Design Center, IBM Microelectron., Encinitas, CA, USA
  • fYear
    2002
  • fDate
    17-19 Aug. 2002
  • Firstpage
    30
  • Lastpage
    37
  • Abstract
    The integration level of RFICs has exhibited considerable progress during the last decade. Si-based single-chip GSM, Bluetooth and DECT transceivers have been reported, while the most exciting milestone for integration will be the RF-system-on-a-chip (i.e., "RF-SoC") product for single-chip multiband multi-standard cellular ICs that support broadband communication. To achieve this highest level of RFIC integration, one has to choose a radio system architecture that requires a minimal number of external components, together with a judicious selection of the IC technology for implementation. For example, we anticipate the direct-conversion or a robust low-IF receiver architecture to become the dominant choice for 3G handset applications. We also expect the Si/SiGe BiCMOS technology to be the optimal device technology for implementing low-power cellular RF-SoC products, while RF-CMOS technology will probably be most successful for the low-cost, less performance sensitive Bluetooth and/or wireless LAN applications.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; cellular radio; elemental semiconductors; low-power electronics; radiofrequency integrated circuits; semiconductor materials; silicon; system-on-chip; 3G handset; IC technology; RF-SoC; RFIC integration; Si-SiGe; Si/SiGe BiCMOS technology; broadband communication; direct-conversion receiver; low-IF receiver; low-power single-chip radio design; multiband multi-standard cellular IC; radio system architecture; BiCMOS integrated circuits; Bluetooth; Broadband communication; GSM; Germanium silicon alloys; Radiofrequency integrated circuits; Receivers; Robustness; Silicon germanium; Transceivers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
  • Print_ISBN
    0-7803-7486-X
  • Type

    conf

  • DOI
    10.1109/ICMMT.2002.1187629
  • Filename
    1187629