• DocumentCode
    3303858
  • Title

    1.9 picosecond optical temporal analyzer using 1.2 picosecond photodetector and gate

  • Author

    Chen, Y. ; Williamson, S.L. ; Brock, T. ; Smith, F.W.

  • Author_Institution
    Ultrafast Sci. Lab., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    1991
  • fDate
    8-11 Dec. 1991
  • Firstpage
    416
  • Lastpage
    421
  • Abstract
    The authors report on a novel photoconductive-type detector with a response time of 1.2 ps. This is the fastest photodetector to date. It is based on low-temperature-grown GaAs and uses interdigitated electrodes of 0.2 mu m spacing to match the carrier transit time to the carrier lifetime. The responsivity is 0.1 A/W. The detector can be driven to an on-state resistance of a few of ohms, with the response time increasing to only 1.5 ps. The photodetector can therefore also function as a picosecond photogate. The two components have been combined to form an all-semiconductor optical temporal analyzer. The system response time is 1.9 ps, with a minimum detectable average power of 500 pW. The technique is jitter-free, permitting long integration times. Ultraweak picosecond fluorescence and scattering experiments, as well as other ultrafast phenomena can be time-resolved using this relatively simple tool.<>
  • Keywords
    III-V semiconductors; gallium arsenide; high-speed optical techniques; metal-semiconductor-metal structures; molecular beam epitaxial growth; photoconducting devices; photodetectors; semiconductor epitaxial layers; semiconductor growth; 0.2 micron; 1.2 to 1.9 ps; 500 pW; GaAs; MSM photodetector; all-semiconductor optical temporal analyzer; carrier lifetime; carrier transit time; detectable average power; interdigitated electrodes; jitter-free; long integration times; low-temperature-grown GaAs; on-state resistance; optical temporal analyzer; photoconductive-type detector; picosecond photodetector; picosecond photogate; response time; responsivity; semiconductor; spacing; ultrafast phenomena; Charge carrier lifetime; Delay; Detectors; Electrodes; Gallium arsenide; Optical devices; Optical scattering; Photoconductivity; Photodetectors; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-0243-5
  • Type

    conf

  • DOI
    10.1109/IEDM.1991.235366
  • Filename
    235366