Title :
A 1.8 GHz fully differential VCO using SiGe BiCMOS process technology
Author :
Lee, Ja-Yol ; Bae, Hyun-Chul ; Lee, Sang-Heung ; Mheen, Bong-Ki ; Kang, Jin-Yeong
Author_Institution :
Korea Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
In this paper, we fabricated a 1.8 GHz differential VCO using 0.5 μm SiGe BiCMOS process technology. The fabricated VCO consumes 16 mA at 3 V supply voltage and has a 1.2×1.6 mm2 chip area. A phase noise measured at 100 kHz offset carrier is -98 dBc/Hz and a tuning range is 1795 MHz ∼1910 MHz when two varactor diodes are biased from 0 V to 3 V.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF oscillators; circuit tuning; phase noise; semiconductor materials; voltage-controlled oscillators; 0.5 micron; 1.8 GHz; 16 mA; 3 V; SiGe; SiGe BiCMOS process technology; fully differential VCO; phase noise; tuning range; varactor diode; BiCMOS integrated circuits; Germanium silicon alloys; Noise measurement; Phase measurement; Phase noise; Semiconductor device measurement; Silicon germanium; Varactors; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN :
0-7803-7486-X
DOI :
10.1109/ICMMT.2002.1187634
