Thermoelectric properties of doped bismuth-antimony single crystals

Author

Grabov, V.M. ; Uryupin, O.N. ; Bondarenko, M.G.

Author_Institution

Herzen Russian State Pedagogical Univ., St. Petersburg, Russia

fYear

1996

fDate

26-29 March 1996

Firstpage

27

Lastpage

31

Abstract

The thermoelectric phenomena in bismuth-antimony crystals doped by tellurium donor and tin acceptor impurities in temperature range 80/spl divide/300 K have been investigated. Crystals have been grown by horizontal zone recrystallization method with the use of regimes which provide their homogeneity. The area ranges of doping bismuth-antimony crystals in which thermoelectric figure of merit appears higher than in undoped crystals have been determined. The transport phenomena and thermoelectric figure of merit of Bi/sub 0.93/Sb/sub 0.07/crystals at y/spl les/0.001 at.% Sn and Te have been investigated in detail. It was shown that thermoelectric figure of merit of Bi/sub 0.93/Sb/sub 0.07/crystals doped y=0.001 at.% Sn in temperature range 80/spl divide/300 K exceeds thermoelectric figure of merit undoped and doped y/spl les/0.001 at.% Te crystals.

Keywords

antimony alloys; bismuth alloys; electrical conductivity transitions; impurity states; metal-insulator transition; tellurium alloys; thermoelectricity; tin alloys; 80 to 300 K; Bi/sub 0.93/Sb/sub 0.07/:Te,Sn; acceptor impurities; donor impurities; homogeneity; horizontal zone recrystallization; semimetal-semiconductor transition; thermoelectric figure of merit; Chemical analysis; Conducting materials; Crystalline materials; Crystals; Doping; Impurities; Tellurium; Temperature distribution; Thermoelectricity; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 1996., Fifteenth International Conference on

Conference_Location

Pasadena, CA, USA

Print_ISBN

0-7803-3221-0

Type

conf

DOI

10.1109/ICT.1996.553250

Filename

553250