• DocumentCode
    3303990
  • Title

    RF linearity study of SiGe HBTs for low power RFIC design. II. Analysis

  • Author

    Xiaojuen, Y. ; Lie, D.Y.C. ; Larson, L.E. ; Blonski, J. ; Gross, J. ; Kumar, M. ; Mecke, J. ; Senior, A. ; Chen, Y. ; Poh, Andrew ; Harame, David

  • Author_Institution
    Commun. Res. & Dev. Center, IBM Microelectron., San Diego, CA, USA
  • fYear
    2002
  • fDate
    17-19 Aug. 2002
  • Firstpage
    74
  • Lastpage
    77
  • Abstract
    For pt. 1 see ibid., p. 70-73 (2002). An analysis is introduced for the third-order-intermodulation (IM3) cancellation induced by the emitter-terminations, which has been observed in part I of this paper. The analysis shows that the IM3 can be perfectly cancelled if the emitter impedance at the second harmonic and the sub-harmonic frequencies are terminated properly and if the effect from qbc is negligible. When the effect of qbc cannot be neglected, optimized source and load harmonic terminations are proposed to minimize the qbc effects. Increasing the source impedance at the fundamental frequency is found effective in minimizing the residual IM3 that is not cancelled from the proposed terminations.
  • Keywords
    Ge-Si alloys; UHF bipolar transistors; Volterra series; equivalent circuits; harmonics; heterojunction bipolar transistors; integrated circuit design; intermodulation distortion; low-power electronics; microwave bipolar transistors; nonlinear network analysis; radiofrequency integrated circuits; semiconductor device models; semiconductor materials; IM3 cancellation; RF linearity study; SiGe; SiGe HBTs; emitter impedance; emitter-terminations; fundamental frequency; low power RFIC design; optimized load harmonic terminations; optimized source terminations; second harmonic sub-harmonic frequencies; third-order-intermodulation cancellation; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance; Linearity; Low-noise amplifiers; Microelectronics; Performance analysis; Radio frequency; Radiofrequency integrated circuits; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
  • Print_ISBN
    0-7803-7486-X
  • Type

    conf

  • DOI
    10.1109/ICMMT.2002.1187638
  • Filename
    1187638