Title :
A high-performance scalable submicron MOSFET for mixed analog/digital applications
Author :
Su, L.T. ; Yasaitis, J.A. ; Antoniadis, D.A.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
A scalable submicron MOSFET with excellent analog characteristics has been designed and fabricated for integration as a ´third´ transistor with conventional CMOS processes. Excellent analog device characteristics have been obtained, including a factor of 10 improvement in available gain, a factor of 100 reduction in peak substrate current, and significantly reduced hot-electron degradation. An angled implantation technique is utilized to allow easy incorporation into submicron processes with negligible impact on the conventional devices.<>
Keywords :
CMOS integrated circuits; VLSI; insulated gate field effect transistors; ion implantation; mixed analogue-digital integrated circuits; oscillators; AIDMOS device; analog characteristics; analog device characteristics; angled implantation technique; asymmetrically implanted DMOSFET; available gain; hot-electron degradation; mixed analog/digital applications; peak substrate current; ring oscillators; scalable MOSFET; submicron MOSFET; submicron processes; third device; Application software; Boron; CMOS process; CMOS technology; Design optimization; Fabrication; Implants; MOS devices; MOSFET circuits; Substrates;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235377
