A high-performance scalable submicron MOSFET for mixed analog/digital applications

Author

Su, L.T. ; Yasaitis, J.A. ; Antoniadis, D.A.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

367

Lastpage

370

Abstract

A scalable submicron MOSFET with excellent analog characteristics has been designed and fabricated for integration as a ´third´ transistor with conventional CMOS processes. Excellent analog device characteristics have been obtained, including a factor of 10 improvement in available gain, a factor of 100 reduction in peak substrate current, and significantly reduced hot-electron degradation. An angled implantation technique is utilized to allow easy incorporation into submicron processes with negligible impact on the conventional devices.<>

Keywords

CMOS integrated circuits; VLSI; insulated gate field effect transistors; ion implantation; mixed analogue-digital integrated circuits; oscillators; AIDMOS device; analog characteristics; analog device characteristics; angled implantation technique; asymmetrically implanted DMOSFET; available gain; hot-electron degradation; mixed analog/digital applications; peak substrate current; ring oscillators; scalable MOSFET; submicron MOSFET; submicron processes; third device; Application software; Boron; CMOS process; CMOS technology; Design optimization; Fabrication; Implants; MOS devices; MOSFET circuits; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235377

Filename

235377