Low frequency noise and quantum transport in 0.1 mu m n-MOSFETs

Author

Shi, Z.M. ; Mieville, J.-P. ; Barrier, J. ; Dutoit, M.

Author_Institution

Inst. for Micro- & Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

363

Lastpage

366

Abstract

Random telegraph signals (RTS) produced in deep-submicron n-MOSFETs by single electron capture and emission on oxide traps ar studied. Trap parameters, energy level, spatial location, and activation energies are derived. For temperatures lower than 20 K, the static transistor characteristics show evidence of resonant tunneling and variable range hopping mediated by localized states in the channel. When resonant tunneling dominates the transport, no RTS is measurable and a new type of low frequency current fluctuations is observed.<>

Keywords

electron traps; insulated gate field effect transistors; quantum interference phenomena; semiconductor device models; semiconductor device noise; tunnelling; 0.1 micron; 20 K; RTS; activation energies; deep submicron MOSFETs; energy level; localized states; low frequency current fluctuations; low frequency noise; low temperatures; n-MOSFETs; oxide traps; quantum transport; random telegraph signals; resonant tunneling; single electron capture; single electron emission; spatial location; static transistor characteristics; trap parameters; variable range hopping; Current measurement; Electron traps; Energy states; Frequency measurement; Low-frequency noise; MOSFET circuits; Radioactive decay; Resonant tunneling devices; Telegraphy; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235378

Filename

235378