A harmonic-balance-oriented modeling approach for microwave electron devices

Author

Filicori, F. ; Monaco, V.A. ; Vannini, G.

Author_Institution

Dipartimento di Elettronica, Inf. e Sistematica, Bologna Univ., Italy

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

345

Lastpage

348

Abstract

A technology-independent model of microwave electron devices, the Nonlinear Integral Model, is proposed. This model is rigorously derived from the Volterra series under mild assumptions valid for most types of electron devices and is particularly suitable for circuit analysis based on harmonic-balance techniques. Moreover, it makes it possible to compute the large-signal response of an electron device directly in terms of data obtained by physics-based numerical simulations. The validity of the model is confirmed both by simulation and by experimental results.<>

Keywords

Schottky gate field effect transistors; digital simulation; nonlinear network analysis; semiconductor device models; solid-state microwave devices; MESFET; Nonlinear Integral Model; Volterra series; experimental results; harmonic-balance-oriented modeling approach; large-signal response; microwave electron devices; model validation; physics-based numerical simulations; simulation results; technology-independent model; Circuit analysis; Circuit simulation; Computational modeling; Electron devices; Equivalent circuits; Microwave devices; Microwave theory and techniques; Numerical models; Numerical simulation; Physics computing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235382

Filename

235382