Determination of back interface state distribution in fully depleted SOI MOSFETs

Author

Mayer, D.C. ; Cole, R.C. ; Pollack, G.P.

Author_Institution

Aerosp. Corp., El Segundo, CA, USA

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

329

Lastpage

332

Abstract

Two experimental techniques are proposed to extract the back interface state energy distribution of a silicon-on-insulator (SOI) film from the terminal characteristics of a fully depleted SOI MOSFET. The observed dependences of the MOSFET threshold voltage and subthreshold slope on substrate voltage are used to determine the density of back interface states (D/sub itb/) as a function of position in the bandgap. Data from fully depleted SIMOX n- and p-MOSFETs yield distributions of D/sub itb/ ranging from a high of approximately 10/sup 12/ cm/sup -2/ eV/sup -1/ near the n- and p-Fermi levels and decreasing below 10/sup 11/ cm/sup -2/ eV/sup -1/ near midgap.<>

Keywords

electronic density of states; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; MOSFET threshold voltage; SIMOX; back interface state distribution; back interface state energy distribution; bandgap; density of back interface states; experimental techniques; fully depleted SOI MOSFETs; substrate voltage; subthreshold slope; terminal characteristics; Doping; Equations; Instruments; Interface states; MOSFET circuits; Photonic band gap; Semiconductor films; Silicon on insulator technology; Substrates; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235386

Filename

235386